4.5-10.5 ghz gaas mmic receiver integrated lna, mixer and lo buffer amp 1.6 db noise figure 14.0 db conversion gain bcb coated die 100% rf, dc and nf testing 100% commercial-level visual inspection using mil-std-883 method 2010 features absolute maximum ratings 1 supply voltage (vdd) supply current (idd) gate voltage (vgg) max power dissipation (pdiss) rf input power (pin) lo input power (pin) operating temperature (ta) storage temperature (tstg) channel temperature (tch) +4.3 vdc 180 ma -3 v 750 mw +14 dbm +15 dbm -55 to +85 oc -65 to +165 oc 175 c page 1 of 5 (1) operation of this device above any one of these parameters may cause permanent damage (2) channel temperature directly affects a device?s mttf. channel temperature should be kept as low as possible to maximize lifetime electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (rf/lo) frequency range (if) conversion gain (cg) noise figure (nf) input third order intercept (iip3) image rejection lo input drive lo/rf isolation rf input return loss lo input return loss if input return loss drain bias voltage (vd1,2,3) gate bias voltage (vg1,2,3) 3 gate bias voltage (vg4) 4 supply current (id1) supply current (id2) supply current (id3) supply current (ig4) units ghz ghz db db dbm dbc dbm db db db db vdc vdc vdc ma ma ma ma min. 4.5 dc 12.0 5 13.0 5 -1.2 typ. - - 14.0 1.6 2.0 20.0 5.0 50.0 10.0 10.0 10.0 4.0 -0.3 -2.0 25.0 45.0 60.0 2.0 max. 10.5 3.5 2.0 5 4.0 0.2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. r1011-bd mimix broadband?s 4.5-10.5 ghz receiver has a noise figure of 1.6 db and 14.0 db conversion gain across the band. the device integrates an lna, image reject mixer and lo buffer amplifier within a single, compact mmic. the image reject mixer eliminates the need for a bandpass filter after the lna to remove thermal noise at the image frequency. i and q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. this device uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. this device is well suited for point-to-point radio, lmds, satcom and vsat applications. general description september 2009 - rev 11-sep-09 (3) vg1,2 and 3 are adjusted to achieve constant drain current regulation. (4) vg4 provides mixer bias and is fixed at -2.0v. (5) 100% rf tested at 6.5-8.5 ghz.
4.5-10.5 ghz gaas mmic receiver receiver measurements page 2 of 5 r1011-bd xr1011-bd: lsb conversion gain (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 2 4 6 8 10 12 14 16 18 20 56789101112 rf (ghz) [if = 1 ghz] lsb conversion gain (db) 25c xr1011-bd: usb conversion gain (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 2 4 6 8 10 12 14 16 18 20 56789101112 rf (ghz) [if = 1 ghz] usb conversion gain (db) 25c xr1011-bd: lsb noise figure (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 456789101112 rf (ghz) [if = 1 ghz] lsb noise figure (db) 25c xr1011-bd: usb noise figure (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 4 5 6 7 8 9 10 11 12 usb rf (ghz) [if = 1 ghz] usb noise figure (db) 25c xr1011-bd: lsb iip3 (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) -4 -2 0 2 4 6 8 55.566.577.588.599.51010.511 rf (ghz) [if = 1 ghz] lsb iip3 (dbm) 25c xr1011-bd: usb iip3 (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) -4 -2 0 2 4 6 8 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 rf (ghz) [if = 1 ghz] usb iip3 (dbm) 25c mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 11-sep-09
4.5-10.5 ghz gaas mmic receiver receiver measurements (cont.) page 3 of 5 r1011-bd xr1011-bd: lsb & usb image re jection (dbc) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 6 7 8 9 101112 lsb rf (ghz) [if = 1 ghz] lsb image rejection (dbc) lsb image usb image xr1011-bd: lsb conversion gain (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 2 4 6 8 10 12 14 16 18 55.566.577.588.599.510 rf (ghz) [if = 1 ghz] lsb conversion gain (db) plo = 3 dbm plo = 5 dbm plo = 7 dbm xr1011-bd: usb conversion gain (db) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) 0 2 4 6 8 10 12 14 16 18 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 rf (ghz) [if = 1 ghz] usb conversion gain (db) plo = 3 dbm plo = 5 dbm plo = 7 dbm xr1011-bd: lsb iip3 (dbm) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) -4 -2 0 2 4 6 8 10 12 14 16 55.566.577.588.599.510 rf (ghz) [if = 1 ghz] lsb iip3 (dbm) plo = 3 dbm plo = 5 dbm plo = 7 dbm xr1011-bd: usb iip3 (dbm) vs. rf (ghz). vd1,2,3 = 4 v, id1+id2 = 70 ma, id3 = 60 ma, vg4 = - 2 v (2 ma) -4 -2 0 2 4 6 8 10 12 14 16 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 rf (ghz) [if = 1 ghz] usb iip3 (dbm) plo = 3 dbm plo = 5 dbm plo = 7 dbm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 11-sep-09
4.5-10.5 ghz gaas mmic receiver r1011-bd page 4 of 5 functional schematic mechanical dimensions pad designation buf i irm q lna if2 if1 lo rf vg3 vd3 vg4 vd2 vg2 vd1 vg1 app note [1] biasing - the device is operated by biasing vd1,2,3 at 4.0v with 25, 45, 60ma respectively. additionally, a fixed voltage bias of -2v is required for mixer bias. it is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in ser ies with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this is -0.3v. make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] board layout - it is recommended to provide 100pf decoupling caps as close to the bias pads as possible, with additional 10f decoupling caps. 0.0 0.0 2 3 1 10 11 0.6 (0.024) 1.75 (0.069) 2.5 (0.098) 0.4175 (0.016) 1.4755 (0.058) 2.45 (0.096) 1.85 (0.073) 1.5 5 (0.061) 1.25 (0.049) 0.95 (0.037) 0.65 (0.026) 0.35 (0.014) 9 8 7 6 5 4 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 11-sep-09 pad number 1 2 3 4 5 6 7 8 9 10 11 pin name if2 if1 lo vg3 vd3 vg4 vd2 vg2 vd1 vg1 rf pin fun c tion if2 output if1 output lo input gate 3 bias drain 3 bias gate 4 bias drain 2 bias gate 2 bias drain 1 bias gate 1 bias rf input nominal value to hybrid 90o (lsb) to hybrid 0o (usb) to hybrid 0o (lsb) to hybrid 90o (usb) +5.0 dbm -0.3v 4.0v, 60 ma -2.0v, 2 ma 4.0v, 45 ma -0.3v 4.0v, 25 ma -0.3v
4.5-10.5 ghz gaas mmic receiver r1011-bd page 5 of 5 handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, po wder, or liquid through burning, crushing, or chemical processing as thes e by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support poli c y - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die atta c hment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, appr oximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-t in eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310o c +/- 10o c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters . bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering des c ription xr1011-bd-000v ?v? - vacuum release gel paks xr1011-bd-ev1 xr1011 die evaluation module caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 11-sep-09
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